Title:
DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/134953
Kind Code:
A1
Abstract:
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.
Inventors:
HASHEMI POUYA (US)
DORIS BRUCE B (US)
KOTHANDARAMAN CHANDRASEKHARAN (US)
SUN JONATHAN ZANHONG (US)
DORIS BRUCE B (US)
KOTHANDARAMAN CHANDRASEKHARAN (US)
SUN JONATHAN ZANHONG (US)
Application Number:
PCT/CN2021/131209
Publication Date:
June 30, 2022
Filing Date:
November 17, 2021
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L43/02; H01L27/22; H01L43/08; H01L43/12
Foreign References:
| CN104134748A | 2014-11-05 | |||
| CN105374936A | 2016-03-02 | |||
| CN107623069A | 2018-01-23 | |||
| US20100053823A1 | 2010-03-04 | |||
| US20170294482A1 | 2017-10-12 | |||
| US20070063236A1 | 2007-03-22 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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