Title:
DOUBLE-SIDE POLISHING METHOD AND DOUBLE-SIDE POLISHED SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2022/254841
Kind Code:
A1
Abstract:
The present invention pertains to a double-side polishing method characterized by performing, on a wafer, first polishing using a slurry of an abrasive grain having a degree of association of less than 1.0, which is given by (volume-based average particle diameter measured by a dynamic scattering method) / (number-based average actual particle diameter measured using a scanning electron microscope), and performing, after the first polishing, second polishing using a slurry containing a water-soluble polymer, on the wafer for 15 seconds or less. Thus, it is possible to provide a double-side polishing method by which a double-side polished wafer having a roughened back surface can be obtained, and to provide a double-side polished silicon wafer having a roughened back surface.
Inventors:
YOSHIDA YASUKI (JP)
TANAKA YUKI (JP)
TANAKA YUKI (JP)
Application Number:
PCT/JP2022/008891
Publication Date:
December 08, 2022
Filing Date:
March 02, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
B24B37/00; B24B37/08; B24B37/24; C09G1/02; C09K3/14; H01L21/304
Domestic Patent References:
| WO2019043890A1 | 2019-03-07 | |||
| WO2018105306A1 | 2018-06-14 |
Foreign References:
| JPH08139033A | 1996-05-31 | |||
| JP2007142455A | 2007-06-07 | |||
| JP2012231170A | 2012-11-22 | |||
| JP2016122806A | 2016-07-07 | |||
| JP2021057453A | 2021-04-08 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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