Title:
DOUBLE T-SHAPED GATE PREPARATION METHOD BASED ON DOUBLE-LAYER PASSIVATION AND ACCURATE ETCHING
Document Type and Number:
WIPO Patent Application WO/2023/006036
Kind Code:
A1
Abstract:
Disclosed in the present invention is a double T-shaped gate preparation method based on double-layer passivation and accurate etching, comprising: sequentially growing two passivation layers on an epitaxial structure, the two passivation layers comprising a bottom passivation layer and a top passivation layer; performing first exposure on the top passivation layer, and etching the top passivation layer and the bottom passivation layer from top to bottom in a first exposure region to form a gate root region; performing second exposure on the top passivation layer, and etching the top passivation layer in a second exposure region to form a lower-layer gate cap region; and performing third exposure on the top passivation layer to form a top-layer gate cap exposure region, and performing metal evaporation and stripping a photoresist portion, i.e., forming a double T-shaped gate structure in two passivation layers. According to the method, a double T-shaped gate structure having a hundred nanoscale gate root is prepared while implementing double-layer passivation of a semiconductor device, and the current collapse effect of the device is greatly suppressed while reducing the defect state density of the device.
Inventors:
WANG WENLIANG (CN)
LI SHANJIE (CN)
LI GUOQIANG (CN)
XING ZHIHENG (CN)
WU NENGTAO (CN)
LI SHANJIE (CN)
LI GUOQIANG (CN)
XING ZHIHENG (CN)
WU NENGTAO (CN)
Application Number:
PCT/CN2022/108634
Publication Date:
February 02, 2023
Filing Date:
July 28, 2022
Export Citation:
Assignee:
UNIV SOUTH CHINA TECH (CN)
International Classes:
H01L21/28; H01L29/423
Foreign References:
| CN113690132A | 2021-11-23 | |||
| US9142626B1 | 2015-09-22 | |||
| CN107331608A | 2017-11-07 | |||
| CN110707150A | 2020-01-17 |
Attorney, Agent or Firm:
JIAQUAN IP LAW (CN)
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