DRIVE DEVICE FOR INSULATED-GATE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION DEVICE

Title:

DRIVE DEVICE FOR INSULATED-GATE SEMICONDUCTOR ELEMENT, AND POWER CONVERSION DEVICE

Document Type and Number:

WIPO Patent Application WO/2015/001883

Kind Code:

A1

Abstract:

A plurality of insulated-gate semiconductor elements connected in parallel are driven in parallel in a well-balanced manner. To turn on one (2a) of a plurality of IGBTs connected in parallel, while driving the gate thereof with a constant current from a constant-current circuit (5) containing a constant-current source (8) and a current-mirror circuit (9), a drive voltage (Vol) for driving the gate of the IGBT (2a) is outputted to the constant-current source (8) and the current-mirror circuit (9) by a voltage-controlling circuit (10), said drive voltage (Vol) being a variable voltage that depends on the difference (ΔV) between a reference voltage (Vref0) and a temperature-dependent diode voltage (Vf) outputted by an integrated temperature-detecting diode (12) in the IGBT (2a). As a result, in addition to the fact that the use of constant-current driving reduces losses and noise when the IGBTs are turned on, the turn-on times of the IGBTs and the amounts of current that flow therethrough can be made uniform regardless of gate-threshold-voltage variability due to differences between the individual IGBTs (2a).

Inventors:

MORI TAKAHIRO (JP)

Application Number:

PCT/JP2014/064482

Publication Date:

January 08, 2015

Filing Date:

May 30, 2014

Export Citation:

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Assignee:

FUJI ELECTRIC CO LTD (JP)

International Classes:

H02M1/08

Domestic Patent References:

WO2001089090A1	2001-11-22
WO2014069146A1	2014-05-08

Foreign References:

JPH1042548A	1998-02-13
JPH08186976A	1996-07-16
JP2002369497A	2002-12-20
JP2002142445A	2002-05-17
JP2008103895A	2008-05-01
JPH0235015A	1990-02-05
JP2008178248A	2008-07-31
JP2009159662A	2009-07-16
JP2009135626A	2009-06-18
JP2002142492A	2002-05-17

Other References: