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Title:
DRY ETCHING APPARATUS AND DRY ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/058851
Kind Code:
A1
Abstract:
Disclosed is a dry etching apparatus, by which adhesion of reaction deposits on a substrate can be suppressed. The dry etching apparatus is provided with a lower electrode (10) having the substrate (50) disposed thereon, and an upper electrode (30) that faces the lower electrode (10). A high frequency voltage is applied to an etching gas to be introduced into between the lower electrode (10) and the upper electrode (30), an insulating shield (20) is provided in the peripheral region of the lower electrode (10), and a recessed section (21) is formed in the insulating shield (20).

Inventors:
MATSUMOTO TAKAO
Application Number:
PCT/JP2010/068336
Publication Date:
May 19, 2011
Filing Date:
October 19, 2010
Export Citation:
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Assignee:
SHARP KK (JP)
MATSUMOTO TAKAO
International Classes:
H01L21/3065
Foreign References:
JP2005302848A2005-10-27
JP2003503841A2003-01-28
JP2000228398A2000-08-15
JP2003100713A2003-04-04
JP2000082698A2000-03-21
JP2009224385A2009-10-01
JPH0936098A1997-02-07
Attorney, Agent or Firm:
TESHIMA MASARU (JP)
Masaru Tejima (JP)
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