Title:
DRY ETCHING METHOD, CLEANING METHOD, AND MANUFACUTRING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/019025
Kind Code:
A1
Abstract:
In a dry etching method according to the present disclosure, a film to be etched is formed on a surface of an object to be treated, contains a metal including at least one metal selected from the group consisting of In, Ga, Cu, Co, Fe, Sn, Zn, Al, Ta, and As, an oxide of the metal, or a nitride of the metal, and is etched by bringing a β-diketone into contact with a gas containing a halogen atom in the molecule.
Inventors:
YAMAUCHI KUNIHIRO (JP)
KITAYAMA HIKARU (JP)
KIKUCHI AKIOU (JP)
KITAYAMA HIKARU (JP)
KIKUCHI AKIOU (JP)
Application Number:
PCT/JP2023/026175
Publication Date:
January 25, 2024
Filing Date:
July 18, 2023
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
International Classes:
H01L21/302; C23F1/12; H01L21/3065
Domestic Patent References:
| WO2017047400A1 | 2017-03-23 |
Foreign References:
| JP2002219699A | 2002-08-06 | |||
| JP2006080103A | 2006-03-23 | |||
| JP2018500767A | 2018-01-11 | |||
| JPH07154004A | 1995-06-16 | |||
| JPH0794492A | 1995-04-07 |
Attorney, Agent or Firm:
WISEPLUS IP FIRM (JP)
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