Title:
DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/241143
Kind Code:
A1
Abstract:
The present invention provides a dry etching method which is capable of etching an etching object that contains copper without using plasma. This dry etching method comprises a dry etching step wherein an etching gas, which contains a halogen fluoride that is a compound of bromine or iodine and fluorine, is brought into contact with a member (12) to be etched, said member having an etching object that is to be subjected to etching by means of the etching gas, thereby etching the etching object without using plasma. The etching object contains copper. In addition, the dry etching step is carried out at a temperature of from 140°C to 300°C.
Inventors:
MATSUI KAZUMA (JP)
Application Number:
PCT/JP2021/017287
Publication Date:
December 02, 2021
Filing Date:
April 30, 2021
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
C23F1/12; H01L21/3065
Foreign References:
| JP2018166205A | 2018-10-25 | |||
| JPH06163477A | 1994-06-10 | |||
| JP2009043976A | 2009-02-26 |
Other References:
See also references of EP 4159892A4
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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