Title:
DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2012/061436
Kind Code:
A4
Abstract:
Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
Inventors:
CHO YOUNG KYU (US)
Application Number:
PCT/US2011/058846
Publication Date:
May 30, 2013
Filing Date:
November 01, 2011
Export Citation:
Assignee:
INTEVAC INC (US)
CHO YOUNG KYU (US)
CHO YOUNG KYU (US)
International Classes:
B65G49/07; H01L21/67; H01L31/18
Attorney, Agent or Firm:
HAYES, Jennifer (401 9th Street N.W., Suite 90, Washington DC, US)
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