Title:
DRY ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/049022
Kind Code:
A1
Abstract:
A dry etching method according to the present invention is a method for performing dry etching of an object by using a plurality of reactive gases including a first reactive gas having a first diffusion rate and a second reactive gas having a second diffusion rate slower than the first diffusion rate, the method comprising the steps of: (a) supplying the second reactive gas into a reaction chamber in which an object to be etched is disposed; and (b) supplying the first reactive gas into the reaction chamber to etch the object.
Inventors:
LEE WOO-JIN (KR)
LEE HONG-JAE (KR)
LEE HONG-JAE (KR)
Application Number:
PCT/KR2023/010990
Publication Date:
March 07, 2024
Filing Date:
July 27, 2023
Export Citation:
Assignee:
TES CO LTD (KR)
International Classes:
H01L21/311; H01L21/02
Foreign References:
| KR101895557B1 | 2018-09-06 | |||
| KR20060018171A | 2006-02-28 | |||
| KR20130108803A | 2013-10-07 | |||
| KR20220108374A | 2022-08-03 | |||
| US9865451B2 | 2018-01-09 |
Attorney, Agent or Firm:
DAE-A INTELLECTUAL PROPERTY CONSULTING (KR)
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