DRY ETCHING RESIDUE REMOVING SOLUTION

Title:

DRY ETCHING RESIDUE REMOVING SOLUTION

Document Type and Number:

WIPO Patent Application WO/2024/071417

Kind Code:

A1

Abstract:

Provided is a dry etching residue removing solution containing: at least one oxidizer selected from the group consisting of hypobromite ions, bromate ions, bromite ions, hypochlorite ions, chlorate ions, and chlorite ions; at least one metal selected from the group consisting of Mg, Ca, Na, and K; and water, wherein the pH of the residue removing solution is 9.5-14 at 25 °C, and the total content of Mg, Ca, Na, and K in the dry etching residue removing solution is 0.01-1,000 ppt.

Inventors:

YARIMIZU HIROTO (JP)
KIKKAWA YUKI (JP)
SATO TOMOAKI (JP)

Application Number:

PCT/JP2023/035770

Publication Date:

April 04, 2024

Filing Date:

September 29, 2023

Export Citation:

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Assignee:

TOKUYAMA CORP (JP)

International Classes:

H01L21/304; C11D7/54; H01L21/306

Attorney, Agent or Firm:

IP FIRM SHUWA (JP)

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