Title:
DUAL-BAND LOW-NOISE AMPLIFIER CIRCUIT, LOW-NOISE AMPLIFIER, AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/028148
Kind Code:
A1
Abstract:
Embodiments of the present application provide a dual-band low-noise amplifier circuit, a low-noise amplifier, and a device. The dual-band low-noise amplifier circuit comprises an amplification sub-circuit and a switch frequency selection circuit; the amplification sub-circuit is used for performing gain amplification on a radio frequency signal to be amplified to obtain an amplified radio frequency signal, and outputting the amplified radio frequency signal; the switch frequency selection circuit is connected to the amplification sub-circuit, and is used for controlling the state of a switch in the switch frequency selection circuit on the basis of a target frequency band corresponding to the radio frequency signal to be amplified, so that the dual-band low-noise amplifier circuit meets optimal performance in the target frequency band. In this way, low-noise amplification of dual-band signals is achieved by means of the reconfigurable structure of the low-noise amplifier circuit, and parameters such as noise figure, gain, and linearity can be kept in optimal states in each frequency band.
Inventors:
ZHENG YAOHUA (CN)
HE MINJUN (CN)
LI PING (CN)
SU QIANG (CN)
HE MINJUN (CN)
LI PING (CN)
SU QIANG (CN)
Application Number:
PCT/CN2021/102683
Publication Date:
February 10, 2022
Filing Date:
June 28, 2021
Export Citation:
Assignee:
SMARTER MICROELECTRONICS GUANG ZHOU CO LTD (CN)
International Classes:
H03F3/195
Domestic Patent References:
| WO2005110044A2 | 2005-11-24 |
Foreign References:
| CN112039442A | 2020-12-04 | |||
| US20180358938A1 | 2018-12-13 | |||
| CN1825757A | 2006-08-30 | |||
| US20020053947A1 | 2002-05-09 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
Download PDF: