Title:
DYNAMIC RANDOM ACCESS MEMORY REFRESH CIRCUIT AND REFRESH METHOD, AND PROOF-OF-WORK CHIP
Document Type and Number:
WIPO Patent Application WO/2023/125446
Kind Code:
A1
Abstract:
A DRAM refresh circuit and refresh method, and a proof-of-work chip. The DRAM refresh circuit comprises a row address recording unit, which is configured to record a row that has been accessed in a DRAM within the current refresh cycle; a refresh driving unit, which is configured to be called to perform a refresh operation; and a refresh control unit, which is configured to call, when the refresh control unit is triggered to perform refreshing and according to a record in the row address recording unit, the refresh driving unit to refresh a row that is not accessed in the DRAM within the current refresh cycle.
Inventors:
ZHANG YUSHENG (CN)
WANG FUQUAN (CN)
WANG FUQUAN (CN)
Application Number:
PCT/CN2022/142051
Publication Date:
July 06, 2023
Filing Date:
December 26, 2022
Export Citation:
Assignee:
SUNLUNE SINGAPORE PTE LTD (CN)
International Classes:
G11C11/406
Foreign References:
| CN114388025A | 2022-04-22 | |||
| JPH0757460A | 1995-03-03 | |||
| US20090144491A1 | 2009-06-04 | |||
| CN104143355A | 2014-11-12 | |||
| US11195568B1 | 2021-12-07 | |||
| US20090161467A1 | 2009-06-25 |
Attorney, Agent or Firm:
AFD CHINA INTELLECTUAL PROPERTY LAW OFFICE (CN)
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