Title:
DYNAMIC RANDOM ACCESS MEMORY TEST METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/060378
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of memories. Provided are a dynamic random access memory test method and apparatus. A dynamic random access memory comprises a substrate and a plurality of storage units, wherein each storage unit comprises a storage capacitor and a first transistor, and the storage capacitor of each storage unit is electrically connected to the substrate by means of the corresponding first transistor. The method comprises: charging a storage capacitor of each storage unit by means of switching, from a first voltage to a second voltage, a voltage applied to a substrate, wherein the second voltage is higher than the first voltage; and after the storage capacitor of each storage unit is charged for a preset duration, testing a dynamic random access memory. The method can shorten the time for writing a background into a test item, thereby improving the test efficiency.
Inventors:
CHANG HENG-CHIA (CN)
Application Number:
PCT/CN2022/131415
Publication Date:
March 28, 2024
Filing Date:
November 11, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C29/08; G11C29/56
Foreign References:
| CN114765049A | 2022-07-19 | |||
| CN1909113A | 2007-02-07 | |||
| US20100302888A1 | 2010-12-02 | |||
| CN114783505A | 2022-07-22 | |||
| CN114530454A | 2022-05-24 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
Download PDF:
Previous Patent: FORMAL VERIFICATION METHOD AND SYSTEM FOR INTERLOCKING DATA SECURITY
Next Patent: MEMORY STRUCTURE AND ELECTRONIC DEVICE
Next Patent: MEMORY STRUCTURE AND ELECTRONIC DEVICE