Title:
ELECTRIC FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2023/228267
Kind Code:
A1
Abstract:
This electric field effect transistor (10) comprises, on a surface in the following order, a source electrode (111), a first gate electrode (112), and a drain electrode (113), and comprises, in a direction perpendicular to the surface, in the following order: a first barrier layer (104); a second gate electrode (103) disposed inside the first barrier layer; a first channel layer (105) composed of a semiconductor; a second barrier layer (106) composed of a semiconductor having a larger energy gap than the first channel layer, and including a δ-doped layer; a second channel layer (107) composed of a semiconductor having a smaller energy gap than the second barrier layer; a third barrier layer (108); and the first gate electrode. Consequently, the present invention is able to provide a field effect transistor that is capable of high output and high frequency operation.
Inventors:
SASAKI TARO (JP)
TSUTSUMI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
NAKAJIMA FUMITO (JP)
TSUTSUMI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
NAKAJIMA FUMITO (JP)
Application Number:
PCT/JP2022/021212
Publication Date:
November 30, 2023
Filing Date:
May 24, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L29/778; H01L21/338; H01L29/812
Foreign References:
| JP2015207651A | 2015-11-19 | |||
| JPH06295926A | 1994-10-21 | |||
| JP2013004572A | 2013-01-07 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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