Title:
ELECTRODE AND COMPOUND SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2006/085670
Kind Code:
A1
Abstract:
An electrode and a compound semiconductor element. The electrode comprises (1) a metal particle group arranged on a p-type compound semiconductor layer and having mean surface coverage C of 20-70% and mean equivalent circle diameter R of 8-30 nm, and (2) a metal film integrally covering the metal particle group and that portion of the p-type compound semiconductor layer not covered with the metal particle group and having electronegativity of 1.6 or above, wherein the mean surface coverage C is the ratio (SMP/SP) between the occupied area SMP of the metal particle group and the entire surface area SP of the p-type compound semiconductor layer, the mean equivalent circle diameter R is an equivalent circle diameter where the number of particles is maximized for equivalent circle diameters obtained from the occupied area of each metal particle assumed to be equivalent to a circle. The compound semiconductor element includes the electrode and the p-type compound semiconductor layer.
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Inventors:
YAMANAKA SADANORI (JP)
ONO YOSHINOBU (JP)
HONDA YOSHIAKI (JP)
ONO YOSHINOBU (JP)
HONDA YOSHIAKI (JP)
Application Number:
PCT/JP2006/302587
Publication Date:
August 17, 2006
Filing Date:
February 08, 2006
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
YAMANAKA SADANORI (JP)
ONO YOSHINOBU (JP)
HONDA YOSHIAKI (JP)
YAMANAKA SADANORI (JP)
ONO YOSHINOBU (JP)
HONDA YOSHIAKI (JP)
International Classes:
H01L21/28; H01L33/38
Foreign References:
| JP2002016311A | 2002-01-18 | |||
| JP2001144323A | 2001-05-25 |
Attorney, Agent or Firm:
Enomoto, Masayuki c/o Sumitomo Chemical Intellectual Property Service (Limited 5-33, Kitahama 4-chome, Chuo-k, Osaka-shi Osaka 50, JP)
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