ELECTRON EMITTER AND ITS PRODUCTION METHOD, COLD−CATHODE FIELD ELECTRON EMITTER AND ITS PRODUCTION METHOD, AND COLD−CATHODE FILED ELECTRON EMISSION DISPLAY AND ITS PRODUCTION METHOD

WIPO Patent Application WO/2002/091417

A1

Degradation of the characteristics of an electron emitting section due to adhesion or adsorption of a gas or a gaseous substance to the electron emitting section is prevented. A cold−cathode field electron emitting device comprises a cathode electrode (11) disposed on a support (10), a gate electrode (13) disposed above the cathode electrode (11) and having an opening (14A), and an electron emitting section disposed on the surface of the cathode electrode (11) on the bottom of the opening (14A). The electron emitting section is composed of a carbon−based material layer (23) formed from a hydrogen carbon gas and a fluorine−containing hydrogen carbide gas. The electron emitting section is fabricated by forming a fluorine carbide thin film on the carbon−based material layer or by terminating the surface of the carbon−based material with fluorine atoms.

MUROYAMA MASAKAZU (JP)
YAGI TAKAO (JP)
INOUE KOUJI (JP)
SAITO ICHIRO (JP)

PCT/JP2002/003528

November 14, 2002

April 09, 2002

Click for automatic bibliography generation  

SONY CORP (JP)
MUROYAMA MASAKAZU (JP)
YAGI TAKAO (JP)
INOUE KOUJI (JP)
SAITO ICHIRO (JP)

H01J1/304; H01J9/02; H01J29/04; H01J31/12; (IPC1-7): H01J1/304; H01J9/02; H01J31/12

WO1997018577A1

1997-05-22

JPH08195165A	1996-07-30
JP2000311578A	2000-11-07
JP2000086216A	2000-03-28
JP2000340098A	2000-12-08
JPH07292459A	1995-11-07
JPH05310443A	1993-11-22
JPH02247938A	1990-10-03

See also references of EP 1383151A4

Yamamoto, Takahisa (Akiba Building 3-2, Ohsaki 4-chom, Shinagawa-ku Tokyo, JP)

View/Download PDF      PDF Help

Previous Patent: INTELLIGENT CIRCUIT BREAKER MODULE

Next Patent: CATHODE-RAY TUBE MOUNTING APPARATUS