Title:
ELIMINATION OF DEFECTS IN EPITAXIAL FILMS
Document Type and Number:
WIPO Patent Application WO1999001593
Kind Code:
A3
Abstract:
A process and apparatus is disclosed by which an epitaxially deposited film is separated from its substrate at elevated temperatures to inhibit thermal mismatch strain induced defect generation in the epitaxial layer. The process occurs by gas phase reaction of an intermediate layer purposely deposited to react with a component in the gas stream after epitaxial deposition. Although the intermediate layer (20) may aid in nucleation of the epitaxial layer (21), the objective is to separate the epitaxial layer on top of intermediate layer from the substrate (18) below the intermediate layer at or near growth temperature to reduce the effect of thermal mismatch between the substrate and epitaxial layers. The epitaxial layer can be separated from its substrate at elevated temperatures and then cooled without defect generation due to the difference in thermal expansion of the substrate and epitaxy. The epitaxial layer is used for further epitaxial deposition or device fabrication.
Inventors:
SOLOMON GLENN S
Application Number:
PCT/US1998/013845
Publication Date:
September 30, 1999
Filing Date:
July 02, 1998
Export Citation:
Assignee:
CBL TECHNOLOGIES (US)
International Classes:
C30B33/00; C30B25/02; C30B25/18; C30B29/38; H01L21/205; H01L33/00; (IPC1-7): H01L21/00
Foreign References:
| US5683591A | 1997-11-04 | |||
| US5679152A | 1997-10-21 | |||
| US5510272A | 1996-04-23 | |||
| US4774194A | 1988-09-27 | |||
| US5665607A | 1997-09-09 | |||
| US5445107A | 1995-08-29 |
Other References:
See also references of EP 1007768A4
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