Title:
ENHANCED SACRIFICIAL LAYER ETCHING TECHNIQUE FOR MICROSTRUCTURE RELEASE
Document Type and Number:
WIPO Patent Application WO2002064495
Kind Code:
A3
Abstract:
A method for at least partially releasing microstructures from a substrate is provided. The method comprises the steps of: a) providing a substrate (2); b) depositing onto said substrate (2) a first layer (4) and a second layer (6), the first layer (4) and the second layer (6) each comprising an electrically conducting material and each having a different oxido-reduction potential; c) electrically connecting the first layer (4) and the second layer (6); d) forming a microstructure (8) on the first (4) and second (6) layers deposited in step b) to produce an intermediate structure (10); and e) electrochemically etching said second layer (6) by immersing the intermediate structure (10) formed in step d) in an electrolyte (12).
Inventors:
DESPONT MICHEL (CH)
DRECHSLER UTE (CH)
GENOLET GREGOIRE (CH)
VETTIGER PETER (CH)
DRECHSLER UTE (CH)
GENOLET GREGOIRE (CH)
VETTIGER PETER (CH)
Application Number:
PCT/IB2002/000395
Publication Date:
June 05, 2003
Filing Date:
February 08, 2002
Export Citation:
Assignee:
IBM (US)
DESPONT MICHEL (CH)
DRECHSLER UTE (CH)
GENOLET GREGOIRE (CH)
VETTIGER PETER (CH)
DESPONT MICHEL (CH)
DRECHSLER UTE (CH)
GENOLET GREGOIRE (CH)
VETTIGER PETER (CH)
International Classes:
B81B3/00; B81C1/00; (IPC1-7): B81B3/00; B81C1/00
Foreign References:
| US5374792A | 1994-12-20 | |||
| US6117694A | 2000-09-12 | |||
| US5262000A | 1993-11-16 | |||
| US5652559A | 1997-07-29 |
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