EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD, AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2022/143778

A1

Disclosed in embodiments of the present invention are an epitaxial structure of a semiconductor device, a preparation method, and a semiconductor device. The epitaxial structure comprises a substrate and a semiconductor layer located on one side of the substrate; the semiconductor layer at least comprises a buffer layer on one side of the substrate; along a direction from a preset source area to a preset drain area, the buffer layer comprises a first buffer portion and a second buffer portion which are connected to each other; the vertical projection of the first buffer portion on the substrate overlaps with the vertical projection of the preset source area on the substrate; the vertical projection of the second buffer portion on the substrate overlaps with the vertical projection of a preset gate area and the preset drain area on the substrate. Ions are implanted into the buffer layer, and the ion implantation concentration in the second buffer portion is greater than or equal to the ion implantation concentration in the first buffer portion. A semiconductor device applying the epitaxial structure has a high breakdown voltage, low leakage and high electrostatic protection capability.

QIAN HONGTU (CN)
PEI YI (CN)
ZHANG HUI (CN)

PCT/CN2021/142523

July 07, 2022

December 29, 2021

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DYNAX SEMICONDUCTOR INC (CN)

H01L29/06; H01L29/778

CN107706238A	2018-02-16
CN101162695A	2008-04-16
CN101752389A	2010-06-23
CN110838518A	2020-02-25
US20140209975A1	2014-07-31

BEIJING BRIGHT IP AGENCY CO., LTD. (CN)

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