Title:
EPITAXIAL STRUCTURE OF SEMICONDUCTOR, SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/231925
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductor epitaxy. Provided in the embodiments of the present application are an epitaxial structure of a semiconductor, a semiconductor device and a preparation method therefor. The epitaxial structure of a semiconductor comprises a silicon substrate, an aluminum-rich silicon layer and an AlN nucleating layer. The aluminum-rich silicon layer is formed on the silicon substrate, and then the nucleating layer is formed on the aluminum-rich silicon layer, wherein the aluminum-rich silicon layer can inhibit the formation of amorphous SiN on the surface of the silicon substrate. In the embodiments of the present application, compared with the prior art, by providing the aluminum-rich silicon layer, it is possible to avoid the formation of amorphous SiN on the surface of the silicon substrate caused by directly reacting the silicon substrate with NH3 during the formation of the AlN nucleating layer, such that the influence of amorphous SiN on epitaxial growth is avoided, and the quality of epitaxial growth is ensured.
Inventors:
FANG YUTAO (CN)
XIA DEYANG (CN)
YE NIANCI (CN)
ZHANG JIE (CN)
XIA DEYANG (CN)
YE NIANCI (CN)
ZHANG JIE (CN)
Application Number:
PCT/CN2023/096580
Publication Date:
December 07, 2023
Filing Date:
May 26, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; C30B25/18; H01L21/335
Foreign References:
| CN114883405A | 2022-08-09 | |||
| US20040119063A1 | 2004-06-24 | |||
| JPH01151232A | 1989-06-14 | |||
| JPH0799204A | 1995-04-11 | |||
| CN108428619A | 2018-08-21 | |||
| CN105895672A | 2016-08-24 | |||
| CN114525589A | 2022-05-24 | |||
| CN1825539A | 2006-08-30 | |||
| US20050106849A1 | 2005-05-19 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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