Title:
EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICES AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2010/070863
Kind Code:
A1
Abstract:
Provided are epitaxial substrates for electronic devices that have both good reduced transverse leakage current and transverse pressure resistance characteristics, and which can improve lengthwise pressure resistance. The epitaxial substrates are provided with a Si monocrystal substrate, a buffer formed as an insulating layer on said Si monocrystal substrate, and a main laminate formed by epitaxially growing multiple group III nitride layers on said buffer, and use the transverse direction as the direction of current continuity. Said buffer comprises at least an initial growth layer that contacts said Si monocrystal substrate and a superlattice laminate having a superlattice structure on said initial growth layer. Said initial growth layer is made of an AlN material. Said superlattice laminate is made by alternately laminating a first layer comprising a Ba1Alb1Gac1Ind1N (0 ≦ a1 ≦ 1, 0 ≦ b1 ≦ 1, 0 ≦ c1 ≦ 1, 0 ≦ d1 ≦ 1, a1 + b1 + c1 + d1 = 1) material with a second layer comprising a Ba2Alb2Gac2Ind2N (0 ≦ a2 ≦ 1, 0 ≦ b2 ≦ 1, 0 ≦ c2 ≦ 1, 0 ≦ d2 ≦ 1, a2 + b2 + c2 + d2 = 1) material having a different band gap than said first layer. Said superlattice laminate and the buffer side portion of said main laminate are characterized in that both have C concentrations of 1 × 1018/cm3 or greater.
Inventors:
IKUTA TETSUYA (JP)
SHIMIZU JO (JP)
SHIBATA TOMOHIKO (JP)
SHIMIZU JO (JP)
SHIBATA TOMOHIKO (JP)
Application Number:
PCT/JP2009/006840
Publication Date:
June 24, 2010
Filing Date:
December 14, 2009
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
IKUTA TETSUYA (JP)
SHIMIZU JO (JP)
SHIBATA TOMOHIKO (JP)
IKUTA TETSUYA (JP)
SHIMIZU JO (JP)
SHIBATA TOMOHIKO (JP)
International Classes:
H01L21/338; C23C16/34; H01L21/205; H01L29/778; H01L29/812
Foreign References:
| JP2007251144A | 2007-09-27 | |||
| JP2005085852A | 2005-03-31 | |||
| JP2005512327A | 2005-04-28 | |||
| JP2003258005A | 2003-09-12 | |||
| JP2006114655A | 2006-04-27 | |||
| JP2008227478A | 2008-09-25 | |||
| JP2007251144A | 2007-09-27 | |||
| JP2005085852A | 2005-03-31 | |||
| JP2003282598A | 2003-10-03 | |||
| JP2008522447A | 2008-06-26 |
Other References:
See also references of EP 2360719A4
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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