Title:
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2023/199647
Kind Code:
A1
Abstract:
The present invention is an epitaxial wafer characterized by having: a silicon substrate; a carbon-containing epitaxial film which is provided on the silicon substrate, has a thickness of at least 3 μm, and has a carbon atom concentration of at least 2.0×1019 atoms/cm3; and a silicon epitaxial film which is provided on the carbon-containing epitaxial film and has a carbon atom concentration of less than 2.0×1019 atoms/cm3. Consequently, provided are: an epitaxial wafer which can be made with a small number of steps and achieves a sufficient oxygen capturing amount; and a manufacturing method therefor.
Inventors:
IKIGAKI KEN (JP)
SUZUKI ATSUSHI (JP)
SUZUKI ATSUSHI (JP)
Application Number:
PCT/JP2023/008433
Publication Date:
October 19, 2023
Filing Date:
March 07, 2023
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/06; C23C16/24; C30B25/20; H01L21/205; H01L21/322
Foreign References:
| JP2009164590A | 2009-07-23 | |||
| JP2010199225A | 2010-09-09 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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