Title:
EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/038105
Kind Code:
A1
Abstract:
This epitaxial wafer is provided with a silicon substrate, an aluminum nitride thin film that is formed on one surface side of the silicon substrate, and an aluminum deposition that is provided between the silicon substrate and the aluminum nitride thin film and prevents the formation of silicon nitride. This method for producing an epitaxial wafer forms an aluminum deposition on one surface of a silicon substrate by supplying trimethyl aluminum into a reactor after setting the substrate temperature, that is the temperature of the silicon substrate, to a first predetermined temperature that is 300°C or more but less than 1,200°C, and then forms an aluminum nitride thin film on the one surface side of the silicon substrate by supplying trimethyl aluminum and ammonia into the reactor after setting the substrate temperature to a second predetermined temperature that is from 1,200°C to 1,400°C (inclusive).
Inventors:
MINO TAKUYA
TAKANO TAKAYOSHI
TSUBAKI KENJI
HIRAYAMA HIDEKI (JP)
SUGIYAMA MASAKAZU (JP)
TAKANO TAKAYOSHI
TSUBAKI KENJI
HIRAYAMA HIDEKI (JP)
SUGIYAMA MASAKAZU (JP)
Application Number:
PCT/JP2013/001502
Publication Date:
March 13, 2014
Filing Date:
March 08, 2013
Export Citation:
Assignee:
PANASONIC CORP (JP)
RIKEN (JP)
UNIV TOKYO (JP)
RIKEN (JP)
UNIV TOKYO (JP)
International Classes:
C23C16/20; H01L21/205; C23C16/34; H01L21/20; H01L33/32
Domestic Patent References:
| WO2004051707A2 | 2004-06-17 |
Foreign References:
| JPH1146045A | 1999-02-16 | |||
| JP2012054427A | 2012-03-15 | |||
| JP2000332289A | 2000-11-30 | |||
| JPH10242055A | 1998-09-11 | |||
| JP2001068414A | 2001-03-16 |
Attorney, Agent or Firm:
NISHIKAWA, Yoshikiyo et al. (JP)
Yoshikiyo Nishikawa (JP)
Yoshikiyo Nishikawa (JP)
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