BACKGROUND

Field

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods to clean equipment. More particularly, embodiments of the present disclosure relate to apparatuses and methods to clean semiconductor, OLED, and flat panel devices.

Description of the Related Art

[0002] In the cleaning of semiconductor, OLED, and flat panel devices, it is often desirable to remove contaminants from surfaces of a substrate, thus leaving clean surfaces. For example, during semiconductor processing, the chamber in which the processing occurs oftentimes needs cleaning as well. Absent cleaning, contaminants may be present that will negatively impact semiconductor device performance.

[0003] Cleaning the chamber, known as process maintenance or PM, shuts down production. No semiconductor devices can be processed in the chamber during PM. Hence, PM greatly impacts semiconductor device throughput. Therefore, reducing PM time would be beneficial. Cleanliness of semiconductor devices, such as substrates, chamber components, chamber tools, chambers, and chamber mainframes, impacts product yield, chamber uptime, and customer’s cost of ownership.

[0004] Most current wet cleaning techniques utilize a vacuum cleaner to remove contamination material from the surfaces of the objects to be cleaned. However, using a vacuum cleaner is insufficient to remove the contamination material from the surfaces of the objects and is therefore not time efficient. Additionally, subsequent measurements of the particles and surface contamination require additional time which decreases microchip yield, decrease tool uptime, and increases customers cost of ownership.

[0005] Accordingly, what is needed in the art are improved cleaning devices and methods for cleaning objects. SUMMARY

[0006] In one embodiment, a method is provided. The method includes moving a cleaning device along a surface of an object. Supercritical carbon dioxide fluid is delivered to the surface of the object. The supercritical carbon dioxide fluid and contamination material from are removed from the object. One or more measurements of the contamination material are determined. Samples of the contamination material are collected.

[0007] In one embodiment, a method is provided. The method includes moving a cleaning device along a surface of a first object. Supercritical carbon dioxide fluid is delivered to the surface of the first object. The supercritical carbon dioxide fluid and contamination material are removed from the first object. One or more measurements of the contamination material from the first object are determined. Samples of the contamination material from the first object are collected. The cleaning device is moved along a surface of a second object. The supercritical carbon dioxide fluid is delivered to the surface of the second object. The supercritical carbon dioxide fluid and contamination material are removed from the second object. One or more measurements of the contamination material from the second object are determined. Samples of the contamination material from the second object are collected.

[0008] In another embodiment, a device is provided. The device includes a cleaning head. An optical channel is coupled to an analyzer. The optical channel is coupled to the cleaning head. A detector coupled to the clean head and a collector is coupled to the detector. A vacuum pump coupled to the collector.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments. [0010] Figures 1A-1 D are schematic, plane views of an object during cleaning according to embodiments.

[0011] Figure 2 is a schematic cross-sectional view of a cleaning device according to an embodiment.

[0012] Figure 3 is a flow diagram illustrating operations of a method for cleaning an object according to an embodiment.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

[0014] Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

[0015] Figure 1A is a schematic, plane view of an object 100 having a surface 102 with contamination material 104 formed on the surface 102 prior to cleaning. The object 100 may be a substrate, chamber component, chamber tool, chamber, and chamber mainframe. The object 100 may have the contamination material 104 formed on the surface 102 prior to processing or after processing. The contamination material may include a plurality of particles 106.

[0016] Figure 1 B, is a schematic, plane view of the object 100 having the surface 102 after a cleaning process. As shown in Figure 1 B, the surface 102 of the object 100 is appears to be devoid of the contamination material 104. However, as shown in Figure 1C, an enlarged scale of a schematic, plane view of the object 100 of Figure 1 B, the contamination material 104 is still present on the surface 102. The contamination material 104 is still present on the surface 102 due to inefficiency of removing the contamination material 104 and an inability to determine a contamination level of the surface 102 of the object 100 during the cleaning process.

[0017] Figure 1 D is an enlarged scale of a schematic, plane view of the object 100 of after a method 300 for cleaning the object 100. The surface 102 of the object 100 is substantially devoid of the contamination material 104. In one embodiment, the object 100 is an incoming chamber component and the method 300 cleans the chamber component prior to incorporation into the chamber. In another embodiment, the chamber and the components of the chamber are cleaned utilizing the method 300 prior to processing. In yet another embodiment, chamber and the components of the chamber component are cleaned utilizing the method 300 after processing as a preventive maintenance and/or troubleshooting practice.

[0018] Figure 2 is a schematic cross-sectional view of a cleaning device 200 according to one embodiment. It is to be understood that the cleaning device described below is an exemplary cleaning device and other cleaning devices, including cleaning devices from other manufacturers, may be used with or modified to accomplish aspects of the present disclosure.

[0019] The cleaning device 200 includes a clean head 202 having a channel 210 coupled to an analyzer 212. In one embodiment, the clean head 202 is also coupled to a movement mechanism 220. The movement mechanism 220 is operable to move the clean head along the surface 102 of the object 100. In one embodiment, the movement mechanism 220 is configured to autonomously move the clean head along the surface 102 of the object 100. In another embodiment, the movement mechanism 220 is configured to receive signals of input commands from a user and move the clean head along the surface 102 of the object 100. In yet another embodiment, the movement mechanism 220 is the user, and the user physically moves the clean head along the surface 102 of the object 100.

[0020] The analyzer 212 is configured to determine a contamination level of the surface 102 of the object 100. In one embodiment, the analyzer 212 is a surface analyst. The surface analyst (such as The Surface Analyst™ available from BTG Labs) is in fluid communication with the channel 210 via an analyst conduit 214. The channel 210 is fitted with an inspection head. Small droplets of probe fluid are distributed on the surface 102 from a pulsed stream of micro drops from the surface analyst. Contact angle measurements are determined from the droplets, which correspond to a measurement of surface cleanliness and energy. The surface analyst may output the contact angle measurements or a pass, warning, or fail output corresponding to whether the contact angle measurements fall within a predetermined pass, warning, or fail range.

[0021] The analyzer 212 may be an infrared and/or reflectively spectroscopy analyst. In one embodiment, the analyzer 212 is a Fourier Transform Infrared Spectroscopy (FTIR) analyst (such as the 4300 Handheld FTIR available from Agilent Technologies) and the channel 210 includes one or more optical channels. The FTIR analyst comprises a sensor in optical communication with the channel 210 via the analyst conduit 214 and an infrared light source, such as an infrared light- emitting diode (LED), in optical communication with the channel 210 via the analyst conduit 214. The FTIR analyst is configured to detect hydrocarbon and silicone oil contamination, assess moisture levels, map thermal damage, identify and verify compositions of the contamination material 104, measure oxidative damage of the surface 102 of the object 100 by measuring a grazing angle generated by the light source, reflected of the surface 102, and received by the sensor. The FTIR analyst may output the measurements or a pass, warning, or fail output corresponding to whether the measurements fall within a predetermined pass, warning, or fail range.

[0022] In another embodiment, the analyzer 212 is a luminescence spectroscopy analyst (such as the SITA CleanoSpector available from SITA Process Solutions) and the channel 210 includes one or more optical channels. The luminescence spectroscopy analyst comprises a sensor in optical communication with the channel 210 via the analyst conduit 214 and a LED in optical communication with the channel 210 via the analyst conduit 214. The sensor detects residual contamination by measuring fluorescence of the surface 102 of the object 100, which is excited by ultraviolet light from the LED. A photodiode in the sensor head measures the intensity of the fluorescence. The luminescence spectroscopy analyst is also configured to measure the thickness of the residual contamination material. The luminescence spectroscopy analyst may output the fluorescence and/or thickness of the residual contamination material or a pass, warning, or fail output corresponding to whether the fluorescence and/or thickness of the residual contamination are within a predetermined pass, warning, or fail range.

[0023] The cleaning device 200 is configured to remove the particles from the surface 102 of the object 100. The cleaning device 200 includes a vacuum pump 208 configured to generate suction and evacuate the contamination material 104 including the plurality of particles 106 from the surface 102 of the object 100 through a first vacuum conduit 222 to a detector 204. The detector is in fluid communication with the clean head 202 via a first vacuum conduit 222. The detector 204 receives the contamination material 104 including the plurality of particles 106 and is configured to determine one or more measurements of the plurality of particles 106.

[0024] In one embodiment, the detector 204 is configured to determine a density of each particle of the plurality of particles 106. The detector 204 may be a surface particle detector (such as the Qlll ^® available from Pentagon Technologies) configured to utilize light scattering particle size analysis to determine the density of each particle, an average particle density, and/or a particle density distribution. The surface particle detector may include a light source, such as a laser beam, a fourier lens, flow cell, rear detector, side detectors, and a ring shape detector. The plurality of particles 106 flow through the flow cell. The laser beam is expanded by the fourier lens, propagated to the flow cell, and scattered by the plurality of particles 106 at various angles based on the density of each particle of the plurality of particles 106. The rear detector, side detectors, and a ring shape detector determine the variation of a scattering pattern generated by the various angles to determine the density of each particle, an average particle density, and/or particle density distribution.

[0025] A collector 206 is in fluid communication with detector 204 via the second vacuum conduit 224. The collector 206 is configured to collect samples of the contamination material 104 including the plurality of particles 106. The samples of the contamination material may be used for further analysis. In one embodiment, the collector 206 includes a grid on a particle trap. After the object 100 is cleaned, the particle trap is removed for particle imaging and for Scanning Electron Microscopy (SEM) and/or Energy Dispersive X-Ray Analysis (EDX) to determine elemental composition and/or quantitative compositional data of the contamination material 104.

[0026] The cleaning device 200 may further include a supercritical carbon dioxide (C0 ₂ ) fluid vessel 216 in fluid communication with a CO2 gas source 218 via a second CO2 conduit 230. The supercritical CO2 fluid vessel 216 is capable of changing the phase of CO2 gas and sustaining the supercritical CO2 fluid at a supercritical phase temperature and pressure. The supercritical CO2 fluid vessel 216 is in fluid communication with the clean head 202 via a first CO2 conduit 228 and is configured to deliver the supercritical CO2 fluid at a velocity to improve particle lift-off from the surface of the 102 of the object 100. In one embodiment, the supercritical CO2 fluid vessel 216 is configured to deliver the supercritical CO2 fluid at a pressure greater than 500 pounds per square inch (psi). The contamination material 104 including the plurality of particles 106 and supercritical CO2 fluid are removed from the object via the first vacuum conduit 222.

[0027] Figure 3 is a flow diagram illustrating operations of a method 300 for cleaning an object 100. At operation 301 , a cleaning device 200 is moved along a surface 102 of an object 100. In one embodiment, the cleaning device 200 includes the clean head 202 having the movement mechanism 220 that is configured to autonomously move the clean head the along the surface 102 of the object 100. In another embodiment, the clean head 202 receives signals of input commands from a user and moves along the surface 102 of the object 100. In yet another embodiment, the user physically moves the clean head 202 along the surface 102 of the object 100.

[0028] At operation 302, supercritical carbon dioxide (CO2) fluid is delivered to the surface 102 of the object 100. Delivering supercritical carbon dioxide fluid removes contamination material 104 from the surface 102 of the object 100. The contamination material may include a plurality of particles 106. Delivering supercritical C0 ₂ fluid at a velocity removes the plurality of particles 106 from the surface 102 of the object 100. In one embodiment, the cleaning device 200 includes the supercritical CO2 fluid vessel 216 in fluid communication with the CO2 gas source 218 via the second CO2 conduit 230. The supercritical carbon dioxide CO2 fluid vessel 216 changes the phase of C0 ₂ gas and sustains the supercritical C0 ₂ fluid at a supercritical phase temperature and pressure. The supercritical C0 ₂ fluid vessel 216 is in fluid communication with the clean head 202 via the first C02 conduit 228 and delivers the supercritical C0 ₂ fluid at the velocity to improve particle lift-off from the surface of the 102 of the object 100. The supercritical C0 ₂ fluid may be delivered at a pressure greater than 500 psi.

[0029] At operation 303, the contamination material 104 and the supercritical C0 ₂ are removed from the surface of the object 100. In one embodiment, the cleaning device 200 removes the contamination material 104 including the plurality of particles 106 and the supercritical C0 ₂ fluid from the object 100 via the first vacuum conduit 222. The cleaning device 200 includes the vacuum pump 208 that generates suction and evacuates the contamination material 104 including the plurality of particles 106 from the surface 102 of the object 100 through the first vacuum conduit 222 to the detector 204 in fluid communication with the clean head 202 via the first vacuum conduit 222.

[0030] At operation 304, one or more measurements of the contamination material 104 are determined. In one embodiment, the detector 204 that receives the contamination material 104 including the plurality of particles 106. The detector 204 determines the density of each particle of the plurality of particles 106. The detector 204 may perform light scattering particle size analysis to determine a density of each particle, an average particle density, and/or a particle density distribution. The detector 204 may include a light source, such as a laser beam, a fourier lens, flow cell, rear detector, side detectors, and a ring shape detector. The plurality of particles 106 flow through the flow cell and the laser beam is expanded by the fourier lens, propagated to the flow cell, and scattered by the plurality of particles 106 at various angles based on the density of each particle. The rear detector, side detectors, and a ring shape detector determine the variation of a scattering pattern generated by the various angles to determine the density of each particle, the average particle density, and/or the particle density distribution. The one or more measurements may be determined during the removal of the contamination material 104 to optimize cleaning time. [0031] At operation 305, samples of the contamination material 104 are collected. In one embodiment, a collector 206 is in fluid communication with the detector 204 via the second vacuum conduit 224 collects samples of the contamination material 104 including the plurality of particles 106. The samples of the contamination material may be used for further analysis. After the object 100 is cleaned, the particle trap is removed for particle imaging and for Scanning Electron Microscopy (SEM) and/or Energy Dispersive X-Ray Analysis (EDX) to determine elemental composition and/or quantitative compositional data of the contamination material 104.

[0032] At operation 306, a contamination level of the surface 102 of the object 100 is determined. The contamination level of the surface 102 may be determined prior to removing the contamination material 104 and/or during the removal of the contamination material 104 to determine if substantially all of the contamination material 104 has been removed.

[0033] In one embodiment, an analyzer 212, coupled to the clean head 202, determines the contamination level of the surface 102 of the object 100. In one embodiment, the analyzer 212 is a surface analyst that distributes small droplets of probe fluid the surface 102 from a pulsed stream of micro drops from the surface analyst. Contact angle measurements are determined from the droplets, which correspond to a measurement of surface cleanliness and energy. The analyzer 212 may output the contact angle measurements or a pass, warning, or fail output corresponding to whether the contact angle measurements fall within a predetermined pass, warning, or fail range. The output of the contact angle measurements and/or the pass, warning, or fail output may correspond to a target output for a chamber component and/or chamber location. The target output may correspond to an endpoint of the method 300.

[0034] In another embodiment, the analyzer 212 is an infrared and/or reflectively spectroscopy analyst. The analyzer 212 may detect hydrocarbon and silicone oil contamination, assess moisture levels, map thermal damage, identify and verify compositions of the contamination material 104, and measure oxidative damage of the surface 102 of the object 100 by measuring the grazing angle generated by a light source, reflected of the surface 102, and received by the sensor. The analyzer 212 may output the measurements or a pass, warning, or fail output corresponding to whether the measurements fall within a predetermined pass, warning, or fail range. The output of the measurements and/or the pass, warning, or fail output may correspond to the target output for a chamber component and/or chamber location.

[0035] In yet another embodiment, the analyzer 212 is a luminescence spectroscopy analyst. The analyzer 212 detects residual contamination by measuring fluorescence of the surface 102 of the object 100, which is excited by ultraviolet light from a LED. The intensity of the fluorescence is further determined by the analyzer 212. The analyzer 212 may also measure the thickness of the contamination material 104. The analyzer 212 may output the fluorescence and/or thickness of the residual contamination material or a pass, warning, or fail output corresponding to whether the fluorescence and/or thickness of the residual contamination are within a predetermined pass, warning, or fail range. The output of fluorescence and/or thickness of the residual contamination material and/or the pass, warning, or fail output may correspond to the target output for a chamber component and/or chamber location.

[0036] The method 300 may be repeated to clean subsequent objects. For example a chamber may comprise multiple components, each component corresponding to an object 100. A first object is cleaned by the method 300 for cleaning an object 100. The density of each particle, the average particle density, and/or the particle density distribution of the contamination material 104 on the surface 102 of the first object is determined along with the contamination level of the first object. A second object is cleaned by the method 300 for cleaning an object 100. The density of each particle, the average particle density, and/or the particle density distribution of the contamination material 104 on the surface 102 of the second object is determined along with the contamination level of the second object. Subsequent, components of the chamber, each component corresponding to an object 100, are cleaned by the method 300 for cleaning an object 100. A specification of the density of each particle, the average particle density, and/or the particle density distribution of the contamination material 104 on the surface 102 of each object 100 and contamination level of each object 100 is complied. The specification may be used a preventive maintenance and/or a troubleshooting practice based contamination levels within the predetermined pass, warning, or fail range.

[0037] In summation, a cleaning device and methods for cleaning an object are described herein. The utilization delivering the supercritical C0 ₂ fluid at a velocity to improve particle lift-off and removing the supercritical C0 ₂ fluid and contamination material allows for substantially all the surface of the object to be devoid of contamination material. Furthermore, determining one or more measurements of the contamination material, collecting samples of the contamination material, and determining the contamination level results in increased microchip yield, increase tool uptime, and decreased cost of ownership.

[0038] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.