ESTER TYPE PHOTOSENSITIVE POLYIMIDE COMPOSITE MATERIAL, PREPARATION METHOD AND SEMICONDUCTOR APPARATUS

WIPO Patent Application WO/2024/046225

A1

Provided in the present application are an ester type photosensitive polyimide material and a preparation method therefor. By means of introducing fluorinated graphene quantum dots containing low-polarity fluorine atoms, the dielectric constant is reduced; the fluorine atoms have strong electronegativity and can firmly immobilize electrons, so that the polarizability is reduced; the fluorinated graphene quantum dots having a small size and a large specific surface area are more easily dispersed uniformly in a photosensitive polyimide matrix, so that the comprehensive performance of the ester type photosensitive polyimide material is improved, and the dielectric constant is reduced. Furthermore, fluorine-containing groups have hydrophobicity, thus preventing performance degradation caused by water absorption of materials. In addition, by means of adjusting the ratio of methacrylate groups, reaction temperatures and time, the molecular weight and the grafting rate are controlled, thereby achieving high sensitivity. In addition, further provided in the present application is a semiconductor apparatus comprising the ester type photosensitive polyimide material.

LI JINHUI (CN)
ZHANG JIALIN (CN)
ZHANG GUOPING (CN)
SUN RONG (CN)

PCT/CN2023/114882

March 07, 2024

August 25, 2023

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SHENZHEN INSTITUTE OF ADVANCED ELECTRONIC MAT (CN)

G03F7/027; C08G73/10; C08L79/08; G03F7/004

CN115509088A	2022-12-23
CN111995750A	2020-11-27
CN112029098A	2020-12-04
US20210125741A1	2021-04-29
CN102375336A	2012-03-14
CN103613927A	2014-03-05

SHENZHEN KEJIN INTELLECTUAL PROPERTY OFFICE (CN)

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