Title:
ETCHANT COMPOSITION FOR FORMING METAL INTERCONNECTS
Document Type and Number:
WIPO Patent Application WO/2011/019209
Kind Code:
A3
Abstract:
The present invention provides an etchant composition for a metal film comprising at least one film selected from an indium-based transparent conductive film, an aluminum-based metal film and a titanium-based metal film, used for the interconnect of a pixel electrode, a gate electrode, a source electrode and a drain electrode. The etchant composition is excellent in etching characteristics to an indium-based transparent conductive film, an aluminum-based metal film and a titanium-based metal film, respectively, and particularly to an Al-La-based alloy film. In addition, the etchant composition can effectively etch a tri-layered film comprising an indium-based transparent conductive film, an Al-La-based alloy film and a titanium-based metal film at a time.
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Inventors:
YANG SEUNG-JAE (KR)
LEE SUCK-JUN (KR)
JANG SANG-HOON (KR)
LEE JOON-WOO (KR)
LIM MIN-KI (KR)
KWON O-BYOUNG (KR)
PARK YOUNG-CHUL (KR)
LEE SUCK-JUN (KR)
JANG SANG-HOON (KR)
LEE JOON-WOO (KR)
LIM MIN-KI (KR)
KWON O-BYOUNG (KR)
PARK YOUNG-CHUL (KR)
Application Number:
PCT/KR2010/005277
Publication Date:
June 03, 2011
Filing Date:
August 11, 2010
Export Citation:
Assignee:
DONGWOO FINE CHEM CO LTD (KR)
YANG SEUNG-JAE (KR)
LEE SUCK-JUN (KR)
JANG SANG-HOON (KR)
LEE JOON-WOO (KR)
LIM MIN-KI (KR)
KWON O-BYOUNG (KR)
PARK YOUNG-CHUL (KR)
YANG SEUNG-JAE (KR)
LEE SUCK-JUN (KR)
JANG SANG-HOON (KR)
LEE JOON-WOO (KR)
LIM MIN-KI (KR)
KWON O-BYOUNG (KR)
PARK YOUNG-CHUL (KR)
International Classes:
C09K13/08; C23F1/20
Foreign References:
| KR20080051249A | 2008-06-11 | |||
| KR20060050581A | 2006-05-19 | |||
| KR20080018010A | 2008-02-27 | |||
| KR20050056153A | 2005-06-14 | |||
| KR20060094706A | 2006-08-30 |
Attorney, Agent or Firm:
HANYANG PATENT FIRM (412-1 Dogok-dong Gangnam-gu, Seoul 135-854, KR)
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