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Title:
ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/196468
Kind Code:
A1
Abstract:
An etching liquid which contains nitric acid, a fluorine-containing compound, and (A) a nitrogen-containing organic compound having a plurality of nitrogen atom-containing repeating units or (B) a phosphorus-containing compound.

Inventors:
SUGISHIMA YASUO (JP)
MIZUTANI ATSUSHI (JP)
PARK KEE YOUNG (JP)
Application Number:
PCT/JP2014/064429
Publication Date:
December 11, 2014
Filing Date:
May 30, 2014
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/308; H01L21/28
Foreign References:
JP2009206462A2009-09-10
JP2005150236A2005-06-09
JP2004200638A2004-07-15
JP2013055087A2013-03-21
JP2009074142A2009-04-09
JP2013102089A2013-05-23
Attorney, Agent or Firm:
IIDA, Toshizo et al. (JP)
Toshizo Iida (JP)
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