Title:
ETCHING METHOD AND ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/100885
Kind Code:
A1
Abstract:
The purpose of this technology is to provide an etching method and an etching apparatus for preventing overetching and semiconductor surface roughness. In this etching method, a mixed gas containing Cl2 and H2 is converted into plasma; the plasma gas from the conversion of the mixed gas into plasma is supplied to a treatment chamber 1001 that holds a group III nitride semiconductor; and the group III nitride semiconductor is etched by the plasma gas. The mixed gas contains 1-10 vol% H2.
Inventors:
HORI MASARU (JP)
TANIDE ATSUSHI (JP)
NAKAMURA SHOHEI (JP)
TAKATSUJI SHIGERU (JP)
NADAHARA SOICHI (JP)
TANIDE ATSUSHI (JP)
NAKAMURA SHOHEI (JP)
TAKATSUJI SHIGERU (JP)
NADAHARA SOICHI (JP)
Application Number:
PCT/JP2019/044307
Publication Date:
May 22, 2020
Filing Date:
November 12, 2019
Export Citation:
Assignee:
UNIV NAGOYA NAT UNIV CORP (JP)
SCREEN HOLDINGS CO LTD (JP)
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JPH02271621A | 1990-11-06 | |||
| JP2004281815A | 2004-10-07 | |||
| JPH09330916A | 1997-12-22 | |||
| JPH0945670A | 1997-02-14 |
Other References:
REARTON, S. J. ET AL.: "Low bias electron cyclotron resonance plasma etching of GaN,AlN,and InN", APPLID PHYSICS LETTERS, vol. 64, no. 17, 25 April 1994 (1994-04-25), pages 2294 - 2296, XP000601704, DOI: 10.1063/1.111648
Attorney, Agent or Firm:
FUJITANI Osamu et al. (JP)
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