Title:
ETCHING METHOD AND ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/134930
Kind Code:
A1
Abstract:
This etching method is characterized by including: a first gas supply step for supplying an etching gas that comprises a β-diketone to a workpiece that has a cobalt film, an iron film, or a cobalt-iron film formed on the surface thereof; and a second gas supply step for supplying the etching gas and a nitrogen oxide gas after the first gas supply step.
More Like This:
JP3540047 | FORMATION OF MICROSCOPIC PATTERN |
JPH09126833 | BEAM STRUCTURE OF AMORPHOUS ALLOY AND ITS MANUFACTURING METHOD |
JPH09330914 | PLASMA ETCHING METHOD |
Inventors:
YAO AKIFUMI (JP)
YAMAUCHI KUNIHIRO (JP)
MIYAZAKI TATSUO (JP)
LIN JUN (JP)
TAKEYA KOJI (JP)
TACHIBANA MITSUHIRO (JP)
YAMAUCHI KUNIHIRO (JP)
MIYAZAKI TATSUO (JP)
LIN JUN (JP)
TAKEYA KOJI (JP)
TACHIBANA MITSUHIRO (JP)
Application Number:
PCT/JP2016/086677
Publication Date:
August 10, 2017
Filing Date:
December 09, 2016
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
TOKYO ELECTRON LTD (JP)
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; H01L21/768; H01L23/532
Foreign References:
JP2015019065A | 2015-01-29 | |||
JP2015012243A | 2015-01-19 | |||
JP2013194307A | 2013-09-30 | |||
JP2009043973A | 2009-02-26 |
Attorney, Agent or Firm:
YASUTOMI & ASSOCIATES (JP)
Download PDF: