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Title:
ETCHING METHOD FOR PHOTOELECTRIC CONVERSION ELEMENT AND ETCHING APPARATUS FOR PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/117818
Kind Code:
A1
Abstract:
The purpose of the present invention is to solve the problem of providing an etching method capable of appropriately etching a plurality of electrode layers even when the film thicknesses of the electrode layers are different. Provided is a method of etching an electrode layer of a photoelectric conversion element according to the present invention, in which an electrode layer is formed in a rear electrode-type photoelectric conversion element, wherein when a conductive film continuously formed on a first conductive-type semiconductor layer and a second conductive-type semiconductor layer on one main surface side of a photoelectric conversion substrate (11) is etched to form a patterned electrode layer on each of the first conductive-type layer and the second conductive-type layer, the main surface of the photoelectric conversion substrate (11) is irradiated with light to observe the photoluminescence intensity from the photoelectric conversion substrate (11), and whether to terminate the etching of the conductive film is determined on the basis of the photoluminescence intensity.

Inventors:
KANEMATSU MASANORI (JP)
ISHIBASHI HIROTAKA (JP)
Application Number:
PCT/JP2020/046073
Publication Date:
June 17, 2021
Filing Date:
December 10, 2020
Export Citation:
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Assignee:
KANEKA CORP (JP)
International Classes:
H01L21/28; H01L31/18; H01L31/0224
Domestic Patent References:
WO2019216339A12019-11-14
Foreign References:
JPH0613446A1994-01-21
JPH0410414A1992-01-14
JP2018181912A2018-11-15
JP2013239476A2013-11-28
JPH07115086A1995-05-02
JP2008210947A2008-09-11
CN106784165A2017-05-31
Attorney, Agent or Firm:
NIIYAMA Yuichi et al. (JP)
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