Title:
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/233673
Kind Code:
A1
Abstract:
This etching method comprises: (a) a step for providing a substrate which comprises a first film that contains a metal element and a non-metal element and a second film that is arranged on the first film and has an opening; and (b) a step for etching the first film through the opening. The step (b) comprises: (i) a step for etching the first film through the opening by means of a first plasma which is generated from a first processing gas that contains a halogen-containing gas by applying a pulse of a high-frequency power; (ii) a step for modifying the side wall of a recessed part that is formed by the step (i) by means of a second plasma which is generated from a second processing gas; and (iii) a step for repeating the steps (i) and (ii).
Inventors:
KUMAKURA SHO (JP)
KIMURA SOICHIRO (JP)
SASA KOYUMI (JP)
ODASHIMA NOBUHIRO (JP)
MASAKI YUJI (JP)
TAKEMOTO NOBORU (JP)
KOBAYASHI MAKOTO (JP)
KIMURA SOICHIRO (JP)
SASA KOYUMI (JP)
ODASHIMA NOBUHIRO (JP)
MASAKI YUJI (JP)
TAKEMOTO NOBORU (JP)
KOBAYASHI MAKOTO (JP)
Application Number:
PCT/JP2022/023499
Publication Date:
December 07, 2023
Filing Date:
June 10, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2021100093A | 2021-07-01 | |||
| JP2021077865A | 2021-05-20 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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