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Title:
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/043239
Kind Code:
A1
Abstract:
Provided is a technique for improving an etching shape.　Provided is an etching method comprising: a step for providing a substrate including a first film and a second film on the first film, wherein the first film contains silicon and the second film has at least one opening; and a step for generating plasma from a processing gas to etch the first film, wherein the processing gas includes a hydrogen fluoride gas, a first halogen-containing gas, and a phosphorus-containing gas, and the first halogen-containing gas at least includes carbon and a halogen other than fluorine.

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Inventors:
MATSUBARA RYO (JP)
TAKINO YUSUKE (JP)
TOMURA MAJU (JP)
Application Number:
PCT/JP2023/030184
Publication Date:
February 29, 2024
Filing Date:
August 22, 2023
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
WO2021090798A12021-05-14
Foreign References:
JP2020115538A2020-07-30
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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