Title:
ETCHING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/234214
Kind Code:
A1
Abstract:
This etching method includes (a) a step for providing a substrate, the substrate comprising a first film and a second film having an opening on the first film, the first film containing a metal element and a non-metal element; (b) a step for forming a protective film on the side wall of a recess formed in the first film correspondingly to the opening; and (c) a step for etching the first film through the opening with plasma generated from a processing gas including a halogen-containing gas simultaneously with (b) or after (b).
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Inventors:
KUMAKURA SHO (JP)
KIMURA SOICHIRO (JP)
SASA KOYUMI (JP)
ODASHIMA NOBUHIRO (JP)
MASAKI YUJI (JP)
TAKEMOTO NOBORU (JP)
KOBAYASHI MAKOTO (JP)
YAMAZAKI SHOTA (JP)
KIMURA SOICHIRO (JP)
SASA KOYUMI (JP)
ODASHIMA NOBUHIRO (JP)
MASAKI YUJI (JP)
TAKEMOTO NOBORU (JP)
KOBAYASHI MAKOTO (JP)
YAMAZAKI SHOTA (JP)
Application Number:
PCT/JP2023/019742
Publication Date:
December 07, 2023
Filing Date:
May 26, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/3205; H01L21/3213; H01L21/768; H01L23/532
Foreign References:
| JPH04206819A | 1992-07-28 | |||
| JPH11135481A | 1999-05-21 | |||
| JP2021077843A | 2021-05-20 | |||
| JPH07335622A | 1995-12-22 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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