Title:
ETCHING METHOD AND PLASMA PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/043082
Kind Code:
A1
Abstract:
The present invention provides a technology for etching regions that have different opening sizes. The present invention provides an etching method that is carried out in a plasma processing apparatus that has a chamber. This etching method is carried out in a plasma processing apparatus that has a chamber, and comprises: (a) a step in which a substrate is prepared on a substrate supporting part within the chamber, the substrate having a silicon-containing film that has a first recess and a second recess which has a smaller opening size than the first recess, and a mask that is provided on the silicon-containing film and has an opening from which the first recess and the second recess are exposed; (b) a step in which a deposition film is formed at least in the first recess with use of a plasma that is generated from a first processing gas within the chamber, the first processing gas containing at least one gas that is selected from the group consisting of a C3F6 gas, a C4F6 gas, a C4F8 gas, an isopropyl alcohol (IPA) gas, a C3H2F4 gas and a C4H2F6 gas; and (c) a step in which the silicon-containing film is etched in the first recess and the second recess with use of a plasma that is generated from a second processing gas within the chamber. In the step (b), the temperature of the substrate supporting part is set to 0°C or less, while the pressure within the chamber is higher than the pressure within the chamber during the step (c).
Inventors:
SAWANO TAKUYA (JP)
YAMAGUCHI MASAHITO (JP)
TOMURA MAJU (JP)
KIHARA YOSHIHIDE (JP)
YAMAGUCHI MASAHITO (JP)
TOMURA MAJU (JP)
KIHARA YOSHIHIDE (JP)
Application Number:
PCT/JP2023/028958
Publication Date:
February 29, 2024
Filing Date:
August 08, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2001053145A | 2001-02-23 | |||
| US20110151670A1 | 2011-06-23 | |||
| JP2008053516A | 2008-03-06 | |||
| JP2010003725A | 2010-01-07 | |||
| JP2002158214A | 2002-05-31 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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