Title:
ETCHING METHOD AND PLASMA TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/239991
Kind Code:
A1
Abstract:
A method according to a representative embodiment of the present invention comprises: a step for preparing an object for processing, said object comprising a silicon film and a mask provided on the silicon film; a step for etching the silicon film, using the mask, by means of a plasma of a gas containing first halogen atoms; a step for modifying a surface of the silicon film into an oxidized layer by means of a plasma of a gas containing oxygen atoms, hydrogen atoms, and second halogen atoms, and said oxidized layer comprises a first region, which is extended along a side wall surface of the mask, and a second region, which is extended on the silicon film; a step for etching the oxidized layer so as to remove the second region while leaving the first region; and a step for etching the silicon film, using the oxidized layer which comprises the mask and the first region, by means of a plasma of a gas containing third halogen atoms.
Inventors:
SHIMIZU YUSUKE (JP)
TAKAHASHI MASAHIKO (KR)
TAKAHASHI MASAHIKO (KR)
Application Number:
PCT/JP2019/022416
Publication Date:
December 19, 2019
Filing Date:
June 05, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2002043413A | 2002-02-08 | |||
| JP2008085341A | 2008-04-10 | |||
| JP2016189409A | 2016-11-04 | |||
| JPH0362519A | 1991-03-18 | |||
| JPH0414868A | 1992-01-20 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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