Title:
ETCHING METHOD AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/009553
Kind Code:
A1
Abstract:
Provided is an etching method by which an etching object having silicon nitride can be selectively etched compared to a non-etching object. This etching method comprises an etching step in which an etching gas, which contains a fluorine compound having at most 3 carbon atoms and having, in a molecule, at least one bond among a carbon-oxygen double bond and an ether bond, is brought into contact with a member to be etched having an etching object and a non-etching object in the presence of plasma, and the etching object is selectively etched compared to the non-etching object. The concentration of the fluorine compound in the etching gas is 0.5-40 vol%, and the etching object has silicon nitride.
Inventors:
MATSUI KAZUMA (JP)
Application Number:
PCT/JP2021/020221
Publication Date:
January 13, 2022
Filing Date:
May 27, 2021
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2013508990A | 2013-03-07 | |||
| JP2005051236A | 2005-02-24 | |||
| JPH0613351A | 1994-01-21 |
Other References:
See also references of EP 4181176A4
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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