Title:
ETCHING METHOD FOR SUBSTRATE, AND SEMICONDUCTOR DEVICE THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/066885
Kind Code:
A1
Abstract:
Disclosed in the present invention are an etching method for a substrate, and a semiconductor device thereof. The method comprises the following steps: transferring a substrate into a processing chamber; and introducing an etching gas and a passivation gas into the processing chamber, wherein the etching gas comprises one or more carbon-containing fluorinated gases to etch the substrate and form a recessed structure thereon; the passivation gas comprises a first passivation gas and a second passivation gas, and is used for forming an etching protection area on a side wall of the recessed structure, the first passivation gas comprising a halogen simple substance and/or a hydrogen halide gas, and the second passivation gas comprising a gasified heavy-metal dopant; and during a processing process, the total gas amount of the second passivation gas is less than the total gas amount of the first passivation gas. The method has the advantages: the method can achieve effective and rapid etching of a substrate by means of a fluorine-containing free radical, and form an etching protection area on a side wall of a recessed structure by means of a carbon-containing free radical and a passivation gas which synergistically function, such that differential expansion of the side wall of the recessed structure caused by an etching gas is avoided, thereby further ensuring the flatness of the side wall of the recessed structure.
Inventors:
ZHANG KAI (CN)
XU WEINA (CN)
HOU JIANQIU (CN)
WU ZIYANG (CN)
ZHANG YICHUAN (CN)
XU WEINA (CN)
HOU JIANQIU (CN)
WU ZIYANG (CN)
ZHANG YICHUAN (CN)
Application Number:
PCT/CN2023/115816
Publication Date:
April 04, 2024
Filing Date:
August 30, 2023
Export Citation:
Assignee:
ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA (CN)
International Classes:
H01L21/311; H01L27/00
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM (CN)
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