Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/129732
Kind Code:
A1
Abstract:
Provided is an etching method wherein a ferroelectric film or a high dielectric
film formed on an upper layer of an electrode film is etched while having the electrode
film formed on a substrate surface remained. The etching method is characterized
in that a perfluorocarbon gas is used as an etching gas.
Inventors:
KOKAZE YUTAKA (JP)
ENDOU MITSUHIRO (JP)
UEDA MASAHISA (JP)
SUU KOUKOU (JP)
ENDOU MITSUHIRO (JP)
UEDA MASAHISA (JP)
SUU KOUKOU (JP)
Application Number:
PCT/JP2007/059601
Publication Date:
November 15, 2007
Filing Date:
May 09, 2007
Export Citation:
Assignee:
ULVAC INC (JP)
KOKAZE YUTAKA (JP)
ENDOU MITSUHIRO (JP)
UEDA MASAHISA (JP)
SUU KOUKOU (JP)
KOKAZE YUTAKA (JP)
ENDOU MITSUHIRO (JP)
UEDA MASAHISA (JP)
SUU KOUKOU (JP)
International Classes:
H01L21/3065; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L41/187; H01L41/22; H01L41/332
Foreign References:
| JP2001284326A | 2001-10-12 | |||
| JP2000012523A | 2000-01-14 | |||
| JPH11111701A | 1999-04-23 |
Other References:
KANG M.-G.: "Reduction of Dry Etching Damage to PZT Films Etched with a C1-Based Plasma and the Recovery Behavior", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 41, no. 4, 2002, pages 445 - 450, XP003016920
KIM D.-P.: "Etching Characteristics of SrBi2Ta2O9 Thin Films in a Cl2/CF4/Ar Plasma", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 41, no. 4, 2002, pages 439 - 444, XP003016921
KIM D.-P.: "Etching Characteristics of SrBi2Ta2O9 Thin Films in a Cl2/CF4/Ar Plasma", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 41, no. 4, 2002, pages 439 - 444, XP003016921
Attorney, Agent or Firm:
SHIGA, Masatake et al. (YaesuChuo-k, Tokyo 53, JP)
Download PDF: