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Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/195709
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for etching a silicon nitride region with a high selectivity. According to this etching method, an object to be processed, which is provided with a silicon nitride region and a silicon-containing region having a composition different from that of the silicon nitride region, is contained in a process chamber and the silicon nitride region is selectively etched. In a first step, a deposit containing a hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by producing a plasma of a processing gas containing a hydrofluorocarbon gas within the process chamber. In a second step, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first step and the second step are alternately repeated.

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Inventors:
WATANABE HIKARU (JP)
EBIHARA RYOSUKE (JP)
Application Number:
PCT/JP2017/017273
Publication Date:
November 16, 2017
Filing Date:
May 02, 2017
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
JP2016058590A2016-04-21
JP2016027594A2016-02-18
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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