Title:
ETCHING SOLUTION COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2018/070837
Kind Code:
A1
Abstract:
The present invention relates to an etching solution composition comprising: hydrogen peroxide; a cyclic or aromatic compound including in a molecule, any one or more selected from among oxygen, sulfur, and nitrogen; an amino carboxylic-based or amino phosphate-based compound; one or more compounds selected from among organic acids, inorganic acids, or salts thereof; an undercut inhibitor; and alkylamine including C4 or higher. The etching solution composition of the present invention controls over-etching at the interface between copper and molybdenum films during an etching process. Thus, the etching process is stable, and etching properties can be improved.
Inventors:
LEE MYUNG HAN (KR)
AHN HO WON (KR)
KIM SE HUN (KR)
AHN HO WON (KR)
KIM SE HUN (KR)
Application Number:
PCT/KR2017/011332
Publication Date:
April 19, 2018
Filing Date:
October 13, 2017
Export Citation:
Assignee:
ENF TECHNOLOGY CO LTD (KR)
International Classes:
C23F1/44; C09K13/06; C09K13/08; C09K13/10
Foreign References:
| KR20150039526A | 2015-04-10 | |||
| KR101659829B1 | 2016-10-10 | |||
| KR20120051488A | 2012-05-22 | |||
| KR20090090456A | 2009-08-26 | |||
| JP2016098386A | 2016-05-30 | |||
| KR20160109569A | 2016-09-21 | |||
| KR20100035250A | 2010-04-05 |
Attorney, Agent or Firm:
PLUS INTERNATIONAL IP LAW FIRM (KR)
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