EXCITATION RADIO-FREQUENCY SYSTEM OF PLASMA ETCHING MACHINE

WIPO Patent Application WO/2022/267371

A1

The present application belongs to the technical field of semiconductor chip production apparatuses, in particular to an excitation radio-frequency system of a plasma etching machine. The plasma etching machine comprises a plasma reaction chamber. The excitation radio-frequency system comprises: a dielectric window, the dielectric window being configured as the top wall of the plasma reaction chamber; a radio-frequency coil, the radio-frequency coil being arranged above the dielectric window; a heating element, the heating element being attached to an upper surface of the dielectric window and being in direct contact with the dielectric window, and the heating element being located between the radio-frequency coil and the dielectric window; and a uniform temperature layer, the uniform temperature layer being laid on top of the heating element and being in direct contact with the heating element. By means of the present application, the bottom surfaces of the dielectric window and a gas intake nozzle can be thoroughly cleaned, and impact by-products are pumped away by a suction pump set at the bottom.

LIU HAIYANG (CN)
LIU XIAOBO (CN)
SUN HONGBO (CN)
GUO SONG (CN)
WANG CHENGYI (CN)
ZHANG XIAO (CN)
HU DONGDONG (CN)
XU KAIDONG (CN)

PCT/CN2021/136737

December 29, 2022

December 09, 2021

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BEIJING LEUVEN SEMICONDUCTOR TECH CO LTD (CN)

H01J37/32; H01J37/02; H01J37/305; H01L21/67

CN211957596U	2020-11-17
CN211957597U	2020-11-17
US20020100557A1	2002-08-01
CN103681300A	2014-03-26
CN110301030A	2019-10-01
CN104183451A	2014-12-03
CN104412717A	2015-03-11
CN104717817A	2015-06-17

NANJING JINGWEI PATENT & TRADEMARK AGENCY CO., LTD (CN)

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