Title:
FULLERENE DERIVATIVE, n-TYPE SEMICONDUCTOR MATERIAL, ORGANIC POWER GENERATION LAYER AND PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/100719
Kind Code:
A1
Abstract:
The present invention provides a fullerene derivative that enables a photoelectric conversion element, which comprises an organic power generation layer that uses this fullerene derivative as an n-type semiconductor material, to achieve a high conversion efficiency, while enabling the photoelectric conversion element to maintain the high conversion efficiency for a long period of time. The present invention provides a fullerene derivative which is represented by formula (1).
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Inventors:
NAGAI TAKABUMI (JP)
OOTAKI KEITO (JP)
OOTAKI KEITO (JP)
Application Number:
PCT/JP2022/043184
Publication Date:
June 08, 2023
Filing Date:
November 22, 2022
Export Citation:
Assignee:
HARVES CO LTD (JP)
International Classes:
C07D209/70; H10K30/50; H10K30/60
Domestic Patent References:
| WO2017061543A1 | 2017-04-13 | |||
| WO2014185536A1 | 2014-11-20 |
Foreign References:
| JP2015113301A | 2015-06-22 | |||
| JP2014218492A | 2014-11-20 |
Attorney, Agent or Firm:
SK INTELLECTUAL PROPERTY LAW FIRM et al. (JP)
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