Title:
FABRICATION METHOD FOR SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/164622
Kind Code:
A1
Abstract:
Provided in some embodiments of the present application is a fabrication method for a semiconductor memory. The fabrication method for the semiconductor memory comprises: providing a part (2) to be processed, and performing a preset process step on the part (2) at least after a minimum waiting time; before performing the preset process step, performing a thermal oxidation process on the part (2); and performing a cleaning process before performing the preset process step, wherein the cleaning process is used to remove oxides on the surface of the part (2), and all or a portion of the oxides are generated by the thermal oxidation process.
Inventors:
LIU HAODONG (CN)
Application Number:
PCT/CN2021/076090
Publication Date:
August 26, 2021
Filing Date:
February 08, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/28
Foreign References:
| CN109786380A | 2019-05-21 | |||
| CN106992177A | 2017-07-28 | |||
| CN107316808A | 2017-11-03 | |||
| CN108807397A | 2018-11-13 | |||
| US20170229460A1 | 2017-08-10 | |||
| KR20070033694A | 2007-03-27 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
Download PDF: