Title:
FASTER PROGRAMMING OF HIGHER LEVEL STATES IN MULTI-LEVEL CELL FLASH MEMORY
Document Type and Number:
WIPO Patent Application WO2006107796
Kind Code:
A3
Abstract:
A program voltage signal implemented as a series of increasing program voltage pulses is applied to a set of non- volatile storage elements. Different increment values can be used when programming memory cells to different memory states. A smaller increment value can be used when programming memory cells to lower threshold voltage memory states and a larger increment value used when programming memory cells to higher threshold voltage memory states such as the highest memory state in an implementation. When non-volatile storage elements of a set are programmed to different memory states under simultaneous application of a single program voltage signal, programming can be monitored to determine when lower state programming is complete. The increment value can then be increased to complete programming to the highest memory state. Coarse/fine programming methodology can be incorporated for the highest memory state when the increment value is increased to maintain the threshold distribution within a reasonable range.
Inventors:
HEMINK GERRITT (JP)
Application Number:
PCT/US2006/012142
Publication Date:
November 30, 2006
Filing Date:
March 31, 2006
Export Citation:
Assignee:
SANDISK CORP (US)
HEMINK GERRITT (JP)
HEMINK GERRITT (JP)
International Classes:
G11C11/56; G11C16/10
Foreign References:
| US5926409A | 1999-07-20 | |||
| EP1426968A2 | 2004-06-09 | |||
| US20020118574A1 | 2002-08-29 |
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