Title:
FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/084795
Kind Code:
A1
Abstract:
The present invention provides a ferroelectric device having excellent ferroelectricity. The present invention has: a first conductor on a first insulator; a ferroelectric layer on the first conductor; a second conductor on the ferroelectric layer; a second insulator on the second conductor; and a third insulator that envelops the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or securing hydrogen, and the third insulator has a function of suppressing the diffusion of hydrogen.
Inventors:
YAMAZAKI SHUNPEI (JP)
JINBO YASUHIRO (JP)
OHNO TOSHIKAZU (JP)
SATO YUICHI (JP)
ETO SACHIE (JP)
KAWAGUCHI SHINOBU (JP)
JINBO YASUHIRO (JP)
OHNO TOSHIKAZU (JP)
SATO YUICHI (JP)
ETO SACHIE (JP)
KAWAGUCHI SHINOBU (JP)
Application Number:
PCT/IB2021/059272
Publication Date:
April 28, 2022
Filing Date:
October 11, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/11507; H01G2/10; H01L21/822; H01L27/04; H01L27/1159; H01L29/786
Foreign References:
| JP2001223342A | 2001-08-17 | |||
| JP2010251590A | 2010-11-04 | |||
| JP2017123388A | 2017-07-13 | |||
| JP2019160841A | 2019-09-19 | |||
| JP2020126866A | 2020-08-20 | |||
| JP2011151370A | 2011-08-04 |
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