Title:
FERROELECTRIC MATERIAL-BASED 2D FLASH MEMORY AND SEMICONDUCTOR FILM FORMING SYSTEM FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/251626
Kind Code:
A1
Abstract:
Disclosed are a ferroelectric material-based two-dimensional (2D) flash memory and a semiconductor film forming system for manufacturing same. The ferroelectric material-based 2D flash memory comprises: a substrate including a channel region extending in a horizontal direction thereof; a ferroelectric layer formed of a ferroelectric material on the upper portion of the channel region and extending in the horizontal direction to implement a plurality of memory cells in regions in contact with the channel region and a plurality of gate metal layers so as to be used as a data storing place; and the plurality of gate metal layers arranged on the ferroelectric layer. The semiconductor film forming system comprises: a film forming chamber for forming a ferroelectric thin film on a substrate; and a rapid cooling chamber for rapidly cooling the ferroelectric thin film while being connected to an output terminal of the film forming chamber.
Inventors:
SONG YUN HEUB (KR)
CHOI CHANG HWAN (KR)
SONG CHANG EUN (KR)
CHOI CHANG HWAN (KR)
SONG CHANG EUN (KR)
Application Number:
PCT/KR2021/005628
Publication Date:
December 16, 2021
Filing Date:
May 04, 2021
Export Citation:
Assignee:
IUCF HYU (KR)
PEDISEM CO LTD (KR)
PEDISEM CO LTD (KR)
International Classes:
H01L27/1159; C23C14/58; C23C16/56; G11C16/04; H01L21/02; H01L21/67; H01L29/78
Foreign References:
| KR20110033747A | 2011-03-31 | |||
| KR100988676B1 | 2010-10-18 | |||
| KR20020035080A | 2002-05-09 | |||
| JP2010147266A | 2010-07-01 | |||
| KR20190048659A | 2019-05-09 |
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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