Title:
FERROELECTRIC MEMORY, THREE-DIMENSIONAL INTEGRATED CIRCUIT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/055685
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductor chips, and provides a ferroelectric memory, a three-dimensional integrated circuit, and an electronic device, which improve the anti-interference capability of capacitors. The ferroelectric memory comprises a capacitor. The capacitor comprises a first stack layer, a first conductive pillar, a second conductive pillar, a first ferroelectric layer, and a second ferroelectric layer, wherein the first stack layer comprises a first conductive part and a second conductive part which are connected. The first conductive pillar passes through the first conductive part, and the second conductive pillar passes through the second conductive part. The first ferroelectric layer passes through the first conductive part and is arranged around the first conductive pillar, and the second ferroelectric layer passes through the second conductive part and is arranged around the second conductive pillar. The capacitor comprises a first capacitor and a second capacitor which are connected in series. The first capacitor comprises the first conductive pillar, the first ferroelectric layer, and the first conductive part, and the second capacitor comprises the second conductive pillar, the second ferroelectric layer, and the second conductive part. The ferroelectric memory can be applied to the three-dimensional integrated circuit to realize data reading and writing.
Inventors:
HUANG KAILIANG (CN)
JING WEILIANG (CN)
YIN SHIHUI (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
JING WEILIANG (CN)
YIN SHIHUI (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
Application Number:
PCT/CN2023/103240
Publication Date:
March 21, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B41/42; G11C11/22; H10B41/40
Domestic Patent References:
| WO2020204314A1 | 2020-10-08 |
Foreign References:
| CN113196484A | 2021-07-30 | |||
| CN112864165A | 2021-05-28 | |||
| CN113782538A | 2021-12-10 | |||
| US20210143162A1 | 2021-05-13 | |||
| US20170053932A1 | 2017-02-23 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
Download PDF:
Previous Patent: SUBSTRATE, ENCAPSULATION STRUCTURE, AND ELECTRONIC DEVICE
Next Patent: ELECTRODE SHEET AND BATTERY
Next Patent: ELECTRODE SHEET AND BATTERY