Title:
FERROELECTRIC RANDOM-ACCESS MEMORY CELL
Document Type and Number:
WIPO Patent Application WO/2024/037525
Kind Code:
A1
Abstract:
A ferroelectric random-access memory (FeRAM) cell (10) is provided. The FeRAM cell (10) includes a vertical channel (310) between a bottom source/drain region and a top source/drain region (630); a gate oxide (320) surrounding the vertical channel (310); and a ferroelectric layer (400) surrounding the gate oxide (320), wherein the ferroelectric layer (400) has two or more sections of different horizontal thicknesses between the bottom source/drain region and the top source/drain region (630). A method of manufacturing the FeRAM cell (10) is also provided.
Inventors:
CHENG KANGGUO (US)
FROUGIER JULIEN (US)
XIE RUILONG (US)
PARK CHANRO (US)
SUNG MIN GYU (US)
FROUGIER JULIEN (US)
XIE RUILONG (US)
PARK CHANRO (US)
SUNG MIN GYU (US)
Application Number:
PCT/CN2023/113051
Publication Date:
February 22, 2024
Filing Date:
August 15, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L29/78; G11C11/22
Foreign References:
| US20150310905A1 | 2015-10-29 | |||
| US9685215B1 | 2017-06-20 | |||
| US6091621A | 2000-07-18 | |||
| CN114284354A | 2022-04-05 | |||
| US20210066502A1 | 2021-03-04 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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