Title:
FERROELECTRIC STORAGE ARRAY AND PREPARATION METHOD THEREFOR, MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/087686
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, provide a ferroelectric storage array and a preparation method therefor, a memory, and an electronic device, for use in providing a high-performance memory. The ferroelectric storage array can be of a two-dimensional structure or a three-dimensional structure. The ferroelectric storage array comprises a substrate and a plurality of storge units disposed on the substrate. Each storge unit comprises a selector and a ferroelectric capacitor which are coupled; the selector comprises a resistance change layer, a first electrode, and a second electrode; the resistance change layer is disposed between the first electrode and the second electrode. The resistance change layer has the characteristic that the current flowing through the resistance change layer changes nonlinearly and reversibly as an applied voltage changes. The ferroelectric capacitor comprises a ferroelectric layer, a third electrode, and a fourth electrode, wherein the ferroelectric layer is disposed between the third electrode and the fourth electrode. The area of the selector is smaller than the area of the ferroelectric capacitor.
Inventors:
LV HANGBING (CN)
SU DIQING (CN)
WANG XIAO (CN)
WANG CHAO (CN)
LI HAO (CN)
XU JEFFREY JUNHAO (CN)
SU DIQING (CN)
WANG XIAO (CN)
WANG CHAO (CN)
LI HAO (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2023/102770
Publication Date:
May 02, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B53/20; H10B63/00
Foreign References:
| CN111223507A | 2020-06-02 | |||
| CN103247335A | 2013-08-14 | |||
| CN109256161A | 2019-01-22 | |||
| CN111052379A | 2020-04-21 | |||
| KR20220014433A | 2022-02-07 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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