Title:
FERROMAGNETIC DUAL TUNNEL JUNCTION ELEMENT AND MAGNETIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2006/112119
Kind Code:
A1
Abstract:
A ferromagnetic dual tunnel junction element (10) which can provide at least 100% of TMR effect at room temperature and is small in TMR lowering due to a bias voltage, and which comprises, laminated sequentially on a substrate (2), a first ferromagnetic layer (13), a first insulation layer (14) serving as a tunnel electron barrier, a second ferromagnetic layer (15), a second insulation layer (16) serving as a tunnel electron barrier, and a third ferromagnetic layer (17), wherein at least the first and second insulation layers (14, 16) and the second ferromagnetic layer (15) inserted between the first and second insulation layers (14, 16) are crystals having the same crystal plane, and the thickness of the second ferromagnetic layer (15) is set such that a plurality of spin-dependent quantum levels are formed in the second ferromagnetic layer (15). A differential tunnel conductance vibrates due to a resonance tunnel effect caused by a change in bias voltage; and a magnetic device using the junction element.
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Inventors:
INOMATA KOUICHIRO (JP)
TEZUKA NOBUKI (JP)
TEZUKA NOBUKI (JP)
Application Number:
PCT/JP2006/302545
Publication Date:
October 26, 2006
Filing Date:
February 14, 2006
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
INOMATA KOUICHIRO (JP)
TEZUKA NOBUKI (JP)
INOMATA KOUICHIRO (JP)
TEZUKA NOBUKI (JP)
International Classes:
H01L43/08; G01R33/09; H01F10/16; H01F10/32; H01L27/105; H01L43/10
Foreign References:
| JP2004079633A | 2004-03-11 | |||
| JP2003318465A | 2003-11-07 |
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjukugyoen Bldg., 2-3-10, Shinjuku, Shinjuku-ku Tokyo, JP)
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